Electronic structure of epitaxial graphene layers on SiC: effect of the substrate

A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of th...

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Bibliographic Details
Published in:Physical review letters 2007-09, Vol.99 (12), p.126805-126805, Article 126805
Main Authors: Varchon, F, Feng, R, Hass, J, Li, X, Nguyen, B Ngoc, Naud, C, Mallet, P, Veuillen, J-Y, Berger, C, Conrad, E H, Magaud, L
Format: Article
Language:English
Subjects:
Condensed Matter
Materials Science
Physics
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Summary:A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of the film is recovered by the second carbon layer grown on both the (0001) and (0001[over]) 4H-SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. Hence the graphene is doped and a gap opens at the Dirac point after three Bernal stacked carbon layers are formed.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.99.126805