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On thermal effects in solid-state lasers: The case of ytterbium-doped materials
A review of theoretical and experimental studies of thermal effects in solid-state lasers is presented, with a special focus on diode-pumped ytterbium-doped materials. A large part of this review provides however general information applicable to any kind of solid-state laser. Our aim here is not to...
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Published in: | Progress in quantum electronics 2006-01, Vol.30 (4), p.89-153 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A review of theoretical and experimental studies of thermal effects in solid-state lasers is presented, with a special focus on diode-pumped ytterbium-doped materials. A large part of this review provides however general information applicable to any kind of solid-state laser. Our aim here is not to make a list of the techniques that have been used to minimize thermal effects, but instead to give an overview of the theoretical aspects underneath, and give a state-of-the-art of the tools at the disposal of the laser scientist to measure thermal effects.
After a presentation of some general properties of Yb-doped materials (
Section 1), we address the issue of evaluating the temperature map in Yb-doped laser crystals, both theoretically and experimentally (
Section 2). This is the first step before studying the complex problem of thermal lensing (
Section 3). We will focus on some newly discussed aspects, like the definition of the thermo-optic coefficient: we will highlight some misleading interpretations of thermal lensing experiments due to the use of the d
n/d
T parameter in a context where it is not relevant.
Section 4 will be devoted to a state-of-the-art of experimental techniques used to measure thermal lensing. Eventually, in
Section 5, we will give some concrete examples in Yb-doped materials, where their peculiarities will be pointed out. |
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ISSN: | 0079-6727 1873-1627 |
DOI: | 10.1016/j.pquantelec.2006.12.001 |