OBIC analysis for 1.3 kV 6H–SiC p +n planar bipolar diodes protected by Junction Termination Extension

• Published in: Diamond and related materials 2004-09, Vol.13 (9), p.1697-1703
• Main Authors: Raynaud, C, Wang, S.-R, Planson, D, Lazar, M, Chante, J.-P
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Diodes; Doping and impurity implantation in other materials; Electric power; Electrical properties characterization; Electronics; Engineering Sciences; Exact sciences and technology; High power electronics; Junction diodes; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SiC; Structure of solids and liquids; crystallography
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2004.02.012

1.3 kV 6H–SiC planar bipolar diodes have been designed, fabricated and investigated to determine blocking voltage characteristics. Current–voltage measurements in forward and reverse bias and OBIC measurements have been performed on different diodes with and without periphery protection using Al ion implantation. More than 70% of the diodes protected with extended periphery protection are able to block 1100 V. For the first time, Medici™ software was used to simulate theoretical photocurrent spectra that are compared qualitatively to experimental results. Electrical analyses and theoretical simulations show that these good results in terms of breakdown voltage are due to the efficiency of the process for periphery protection.