P–N Junction creation in 6H-SiC by aluminum implantation

Bipolar diodes, protected with junction termination extensions, were processed in 6H-SiC. A 5-fold aluminum implantation was carried out for the main p +–n junction creation, which led to the material amorphization. The recrystallization variation with the annealing temperature and duration is exami...

Full description

Saved in:
Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1999-07, Vol.61 (2), p.424-428
Main Authors: Ottaviani, L, Locatelli, M.L, Planson, D, Isoird, K, Chante, J.P, Morvan, E, Godignon, P
Format: Article
Language:English
Subjects:
Applied sciences
Diode characteristics
Diodes
Electric power
Electronics
Engineering Sciences
Exact sciences and technology
Furnace annealing
Implantation
Recrystallization
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Bipolar diodes, protected with junction termination extensions, were processed in 6H-SiC. A 5-fold aluminum implantation was carried out for the main p +–n junction creation, which led to the material amorphization. The recrystallization variation with the annealing temperature and duration is examined in this paper. We performed the Al implantations with opposite energy orders, in order to study their influence on the diode electrical characteristics. The increasing order led to a better forward conduction, and reverse leakage currents more important.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(98)00547-9