On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction

This paper reports a parameter extraction method based on a new model for the high frequency capacitance–voltage ( C( V)) characteristics of 6H-SiC boron compensated junctions. The C( V) model confirms the presence of two type regions (p − and n −) in the quasi-intrinsic layer induced by boron compe...

Full description

Saved in:
Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1999-07, Vol.61 (2), p.429-432
Main Authors: Brezeanu, Gh, Badila, M, Tudor, B, Millan, J, Godignon, P, Chante, J.P, Locatelli, M.L, Lebedev, A, Banu, V
Format: Article
Language:English
Subjects:
Boron compensation
C( V) characteristics
Electric power
Engineering Sciences
Parameter extraction
Silicon carbide
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper reports a parameter extraction method based on a new model for the high frequency capacitance–voltage ( C( V)) characteristics of 6H-SiC boron compensated junctions. The C( V) model confirms the presence of two type regions (p − and n −) in the quasi-intrinsic layer induced by boron compensation. The extracted values of the net doping of these zones (6–10×10 12 cm −3) are in good agreement with previously reported data. In contrast, the thickness of the quasi-intrinsic layer, which is about twice the epilayer’s width, proves the expansion of the quasi-intrinsic region in the substrate.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(98)00548-0