LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

• Published in: Journal of crystal growth 2004, Vol.272 (1-4), p.305-311
• Main Authors: Di Forte-Poisson, Marie-Antoinette, Magis, M., Tordjman, Maurice, Aubry, Raphaël, Sarazin, Nicolas, Peschang, M., Morvan, Erwan, Delage, Sylvain Laurent, Di Persio, J., Quere, R., Grimbert, B., Hoel, Virginie, Delos, E., Ducatteau, Damien, Gaquière, Christophe
• Format: Article
• Language: English
• Subjects: Engineering Sciences
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2004.08.121

This paper reports on the LP-MOCVDgrowth optimisation of GaAlN/GaN heterostructures grown on silicon carbide substrates for HEMT applications, and on the first device performances obtained with these structures. The critical impact of some growth parameters on the physical properties of the GaAlN/GaN epilayers has been identified and studied using high-resolution X-ray diffraction, AFM, C2V and sonogauge measurements. SiC substrates from different suppliers were evaluated and their influence on the physical properties of the GaAlN/GaN HEMT structures were investigated. We show that the static characteristics of the devices such as maximum drain current Idss or pinch-off voltage are correlated with the nucleation layer composition ( GaN or GaAlN) of the HEMT structure and with the defect density of the SiC substrate. A maximum drain current Idss around 1 A/mm and a pinch-off voltage of -5 V have been measured for devices with a gate length of 0.3 mm and a GaN nucleation layer, to be compared to an Idss up to 1.3 A/mm obtained for devices with the same geometry but with a GaAlN nucleation layer. I2V characteristics measured under pulsed measurements have also evidenced a clear impact of the nucleation layer composition on the trap density in the GaAlN/GaN HEMT structure. The first devices related to HEMT wafers with GaN nucleation layers were measured at 10 GHz using a load pull system. They show a CW output power in excess of 2.8 W/mm for a gate length of 0.5 mm, while devices related to HEMT wafers with GaAlN nucleation layer exhibit output power up to 4 W/mm at 10 GHz