Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method,...

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Bibliographic Details
Published in:Journal of applied physics 2003-12, Vol.94 (12), p.7520-7525
Main Authors: Lampin, E., Cristiano, F., Lamrani, Y., Claverie, A., Colombeau, B., Cowern, N. E. B.
Format: Article
Language:English
Subjects:
Condensed Matter
Engineering Sciences
Micro and nanotechnologies
Microelectronics
Physics
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Summary:The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method, respectively) are presented and tested against a variety of experimental conditions. They are first applied to a transient enhanced diffusion experiment carried out on a structure containing several B delta-doped layers, in which the amount of diffusion of the different layers is accurately predicted. The fully coupled method is then used to simulate the diffusion of ultrashallow B-implanted profiles. This work definitely demonstrates the relevance of accurate physical defect models for the successful design of ultrashallow junctions in future generations of integrated circuits.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1627461