Deposition of ZnO inclined c-axis on silicon and diamond by r.f. magnetron sputtering

Suitable deposition conditions yielding to thin zinc oxide (ZnO) films with inclined c‐axis have been determined in this work. These films were deposited on silicon (100) and on the nucleation side of self‐standing diamond substrates. We used r.f. magnetron and a zinc‐oxyde target. We characterized...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2007-09, Vol.204 (9), p.3091-3095
Main Authors: Bensmaine, S., Le Brizoual, L., Elmazria, O., Fundenberger, J. J., Benyoucef, B.
Format: Article
Language:English
Subjects:
61.10.Nz
68.37.Hk
68.55.Ac
68.55.Jk
81.15.Cd
Chemical Sciences
Condensed Matter
Cristallography
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Engineering Sciences
Exact sciences and technology
Materials Science
Mechanics
Mechanics of materials
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Suitable deposition conditions yielding to thin zinc oxide (ZnO) films with inclined c‐axis have been determined in this work. These films were deposited on silicon (100) and on the nucleation side of self‐standing diamond substrates. We used r.f. magnetron and a zinc‐oxyde target. We characterized by X‐ray diffraction (XRD) the film texture and by scanning electron microscopy (SEM) the film morphology. XRD has revealed that theses films are polycrystalline in nature having a hexagonal wurtzite crystal structure. We have measured a c‐axis angle of inclination of 45° in the case of ZnO/Diamond sample. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200776322