Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work, GaN wa...

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Bibliographic Details
Published in:Applied physics letters 2007-08, Vol.91 (7), p.071120-071120-3
Main Authors: Rogers, D. J., Hosseini Teherani, F., Ougazzaden, A., Gautier, S., Divay, L., Lusson, A., Durand, O., Wyczisk, F., Garry, G., Monteiro, T., Correira, M. R., Peres, M., Neves, A., McGrouther, D., Chapman, J. N., Razeghi, M.
Format: Article
Language:English
Subjects:
Condensed Matter
Materials Science
Physics
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Summary:Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work, GaN was grown on Zn O ∕ c - Al 2 O 3 using low temperature/pressure MOVPE with N 2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c - Al 2 O 3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2770655