AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111)

Quarter-wave distributed Bragg reflectors (DBRs) consisting of AlN and AlxGa1-xN (x=0.25plus/minus 3%) stacked layers designed for the UV spectral region have been grown on Si substrates by MBE. TEM, Rutherford Back-Scattering and photoluminescence have been performed to assess the structural qualit...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002-10, Vol.41 (Part 2, No. 10B), p.L1140-L1142
Main Authors: Natali, Franck, Antoine-Vincent, Nadège, Semond, Fabrice, Byrne, Declan, Hirsch, Lionel, Barrière, Albert Serge, Leroux, Mathieu, Massies, Jean, Leymarie, Joel
Format: Article
Language:English
Subjects:
Engineering Sciences
Micro and nanotechnologies
Microelectronics
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Summary:Quarter-wave distributed Bragg reflectors (DBRs) consisting of AlN and AlxGa1-xN (x=0.25plus/minus 3%) stacked layers designed for the UV spectral region have been grown on Si substrates by MBE. TEM, Rutherford Back-Scattering and photoluminescence have been performed to assess the structural quality and the composition of DBRs. High reflectance values (91%) are obtained, for a relatively rather small number of periods (15), because of the larger refractive index ratio between AlN and AlGaN compared to traditional AlGaN/GaN DBRs. The experimental reflectance data were compared with calculations and show excellent agreement with respect to peak reflectance and spectral width. 14 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.41.L1140