Analysis of Latchup susceptibility to internal logical states by using a Laser beam

Experimental results using a laser beam in order to demonstrate the dependence of the latchup sensitivity versus internal logical states are presented. The latch-up triggering mechanisms involved by this method are then numerically analysed by the means of a 2D device simulator in a mixed mode envir...

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Bibliographic Details
Published in:Microelectronic engineering 1996, Vol.31 (1), p.79-86
Main Authors: Fouillat, P., Lapuyade, H., Maidon, Y., Dom, J.P.
Format: Article
Language:English
Subjects:
Engineering Sciences
Micro and nanotechnologies
Microelectronics
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Summary:Experimental results using a laser beam in order to demonstrate the dependence of the latchup sensitivity versus internal logical states are presented. The latch-up triggering mechanisms involved by this method are then numerically analysed by the means of a 2D device simulator in a mixed mode environment. We show that the susceptibility to the latchup phenomenon is increased when the MOS transistor concerned by the parasitic structure is in its low impedance state. It also demonstrates that the usual precautions taken in order to prevent the latchup phenomenon may be efficiently put to the test by using a laser beam contactless testing technique.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(95)00328-2