Vapour–liquid–solid mechanism for the growth of SiC homoepitaxial layers by VPE

In order to reach fast growth regime, we have investigated the SiC homoepitaxial growth on off-axis 4H-SiC substrates from a vapour–liquid–solid (VLS) mechanism in a vertical cold wall CVD reactor. The experiments involved silane and propane diluted in hydrogen as feeding vapour phase and melted sil...

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Bibliographic Details
Published in:Journal of crystal growth 2002, Vol.234 (1), p.63-69
Main Authors: Chaussende, D., Ferro, G., Monteil, Y.
Format: Article
Language:English
Subjects:
A1. Vapour–liquid–solid mechanism
A3. Liquid phase epitaxy
A3. Vapor phase epitaxy
B1. Silicon carbide
Chemical Sciences
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Material chemistry
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
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Summary:In order to reach fast growth regime, we have investigated the SiC homoepitaxial growth on off-axis 4H-SiC substrates from a vapour–liquid–solid (VLS) mechanism in a vertical cold wall CVD reactor. The experiments involved silane and propane diluted in hydrogen as feeding vapour phase and melted silicon as “liquid catalyst”. Growth rates up to 25 μm/h at 1500°C and 35 μm/h at 1600°C with a bunched step-terrace structure are demonstrated in such a system. The formation and stability of the VLS equilibrium is discussed with respect to the experimental parameters and a first approach of the mechanism is proposed.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)01651-7