SiC Homoepitaxial Growth at Low Temperature by Vapor−Liquid−Solid Mechanism in Al−Si Melt

Homoepitaxial growth of SiC was successfully performed at a temperature as low as 1100 °C via a vapor−liquid−solid (VLS) mechanism where propane feeds an Al−Si droplet. This approach has several advantages compared to the conventional liquid-phase epitaxy (LPE) such as an easier mastering of the gro...

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Bibliographic Details
Published in:Crystal growth & design 2003-05, Vol.3 (3), p.285-287
Main Authors: Jacquier, Christophe, Ferro, Gabriel, Cauwet, François, Chaussende, D, Monteil, Yves
Format: Article
Language:English
Subjects:
Chemical Sciences
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Liquid phase epitaxy
deposition from liquid phases (melts, solutions, and surface layers on liquids)
Material chemistry
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Homoepitaxial growth of SiC was successfully performed at a temperature as low as 1100 °C via a vapor−liquid−solid (VLS) mechanism where propane feeds an Al−Si droplet. This approach has several advantages compared to the conventional liquid-phase epitaxy (LPE) such as an easier mastering of the growth as no thermal gradient (vertical or radial) needs to be controlled. We observed however the formation at the surface of small crystals during the cooling. Some small nonwetted zones are also seen, but they occupy less than 1% of the sample area. Both defects were also present in LPE configuration.
ISSN:1528-7483
1528-7505
DOI:10.1021/cg0256069