Epitaxial thin films of multiferroic GaFeO3 on conducting indium tin oxide (001) buffered yttrium-stabilized zirconia (001) by pulsed laser deposition

Epitaxial films of an alternative multiferroic material, GaFeO3 (GFO), were grown by pulsed laser deposition on yttrium-stabilized zirconia (001) and on conducting buffer layers of indium tin oxide (001). They present a perfect epitaxial growth along the GFO [010] axis and six crystallographic varia...

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Bibliographic Details
Published in:Applied physics letters 2007-11, Vol.91 (20), p.202504/1-3
Main Authors: Trassin, M., Viart, N., Versini, G., Loison, J.-L., Vola, J.-P., Schmerber, G., Crégut, O., Barre, S., Pourroy, G., Lee, J. H., Jo, W., Mény, C.
Format: Article
Language:English
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Summary:Epitaxial films of an alternative multiferroic material, GaFeO3 (GFO), were grown by pulsed laser deposition on yttrium-stabilized zirconia (001) and on conducting buffer layers of indium tin oxide (001). They present a perfect epitaxial growth along the GFO [010] axis and six crystallographic variants in the film’s plane. Their magnetic properties are close to those of the bulk with an out-of-plane [010] hard direction and a Curie temperature of ∼200K. The films did exhibit ferroelectric properties when characterized by electrostatic force microscopy.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2813020