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Role of boron on the Spark Plasma Sintering of an α-SiC powder

This study deals with the role of non-oxide sintering aids such as boron carbide (B 4C) or – free boron (B) plus free carbon (C) – on the Spark Plasma Sintering treatment of silicon carbide. The results so obtained clearly show that free boron plus free carbon additions lead to the higher densificat...

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Published in:Journal of the European Ceramic Society 2008, Vol.28 (9), p.1881-1890
Main Authors: Maître, A., Put, A. Vande, Laval, J.P., Valette, S., Trolliard, G.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c471t-cc79683398c9ea0d3ba2ac05a90b916973f232f6f9abf92a82c5b6444d7eddc43
cites cdi_FETCH-LOGICAL-c471t-cc79683398c9ea0d3ba2ac05a90b916973f232f6f9abf92a82c5b6444d7eddc43
container_end_page 1890
container_issue 9
container_start_page 1881
container_title Journal of the European Ceramic Society
container_volume 28
creator Maître, A.
Put, A. Vande
Laval, J.P.
Valette, S.
Trolliard, G.
description This study deals with the role of non-oxide sintering aids such as boron carbide (B 4C) or – free boron (B) plus free carbon (C) – on the Spark Plasma Sintering treatment of silicon carbide. The results so obtained clearly show that free boron plus free carbon additions lead to the higher densification rates. This favourable behaviour with regards to the densification kinetics is accompanied by the absence of any abnormal grain growth. At the opposite, boron carbide additions do not significantly raise the densification kinetic after SPS treatment of SiC in comparison to pure silicon carbide. In this case, TEM investigations point out the formation of a borosilicate vitreous phase due to the dissolution process of B 4C in contact with a native superficial silica layer surrounding the SiC grains. The resulting liquid phase leads to an abnormal grain growth coupled with undensifying process.
doi_str_mv 10.1016/j.jeurceramsoc.2008.01.002
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fullrecord <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00272217v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0955221908000095</els_id><sourcerecordid>34008542</sourcerecordid><originalsourceid>FETCH-LOGICAL-c471t-cc79683398c9ea0d3ba2ac05a90b916973f232f6f9abf92a82c5b6444d7eddc43</originalsourceid><addsrcrecordid>eNqNkM1q3DAUhUVpodM072AKDXRh90qyLSubEiZ_hYGWTgrdiWv5utHUY00kT0ofKy-SZ6rMhNBlQSAQn87hfIy941Bw4PXHTbGhfbAUcBu9LQRAUwAvAMQLtuCNknnN9Y-XbAG6qnIhuH7N3sS4AeAKtF6wT9_8QJnvs9YHP2bpTLeUrXcYfmVfB4xbzNZunCi48eeM4Zg9PuRrt8x2_ndH4S171eMQ6fjpPmLfLy9ultf56svV5-XZKrel4lNurdJ1I6VurCaETrYo0EKFGlrNa61kL6To615j22uBjbBVW5dl2SnqOlvKI_bhkHuLg9kFt8Xwx3h05vpsZea3NFmlfeqeJ_bkwO6Cv9tTnMzWRUvDgCP5fTSyTJqqUiTw9ADa4GMM1D8nczCzX7Mx__o1s18DfC5Ln98_tWC0OPQBR-vic4IAKVValrjzA0dJz72jYKJ1NFrqXCA7mc67_6n7C3i2lpo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34008542</pqid></control><display><type>article</type><title>Role of boron on the Spark Plasma Sintering of an α-SiC powder</title><source>Elsevier</source><creator>Maître, A. ; Put, A. Vande ; Laval, J.P. ; Valette, S. ; Trolliard, G.</creator><creatorcontrib>Maître, A. ; Put, A. Vande ; Laval, J.P. ; Valette, S. ; Trolliard, G.</creatorcontrib><description>This study deals with the role of non-oxide sintering aids such as boron carbide (B 4C) or – free boron (B) plus free carbon (C) – on the Spark Plasma Sintering treatment of silicon carbide. The results so obtained clearly show that free boron plus free carbon additions lead to the higher densification rates. This favourable behaviour with regards to the densification kinetics is accompanied by the absence of any abnormal grain growth. At the opposite, boron carbide additions do not significantly raise the densification kinetic after SPS treatment of SiC in comparison to pure silicon carbide. In this case, TEM investigations point out the formation of a borosilicate vitreous phase due to the dissolution process of B 4C in contact with a native superficial silica layer surrounding the SiC grains. The resulting liquid phase leads to an abnormal grain growth coupled with undensifying process.</description><identifier>ISSN: 0955-2219</identifier><identifier>EISSN: 1873-619X</identifier><identifier>DOI: 10.1016/j.jeurceramsoc.2008.01.002</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Applied sciences ; Boron ; Building materials. Ceramics. Glasses ; Carbon ; Ceramic industries ; Chemical industry and chemicals ; Engineering Sciences ; Exact sciences and technology ; Grain growth ; Materials ; SiC ; Sintering ; SPS ; Structural ceramics ; Technical ceramics</subject><ispartof>Journal of the European Ceramic Society, 2008, Vol.28 (9), p.1881-1890</ispartof><rights>2008 Elsevier Ltd</rights><rights>2008 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c471t-cc79683398c9ea0d3ba2ac05a90b916973f232f6f9abf92a82c5b6444d7eddc43</citedby><cites>FETCH-LOGICAL-c471t-cc79683398c9ea0d3ba2ac05a90b916973f232f6f9abf92a82c5b6444d7eddc43</cites><orcidid>0000-0002-7425-4121</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=20337169$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00272217$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Maître, A.</creatorcontrib><creatorcontrib>Put, A. Vande</creatorcontrib><creatorcontrib>Laval, J.P.</creatorcontrib><creatorcontrib>Valette, S.</creatorcontrib><creatorcontrib>Trolliard, G.</creatorcontrib><title>Role of boron on the Spark Plasma Sintering of an α-SiC powder</title><title>Journal of the European Ceramic Society</title><description>This study deals with the role of non-oxide sintering aids such as boron carbide (B 4C) or – free boron (B) plus free carbon (C) – on the Spark Plasma Sintering treatment of silicon carbide. The results so obtained clearly show that free boron plus free carbon additions lead to the higher densification rates. This favourable behaviour with regards to the densification kinetics is accompanied by the absence of any abnormal grain growth. At the opposite, boron carbide additions do not significantly raise the densification kinetic after SPS treatment of SiC in comparison to pure silicon carbide. In this case, TEM investigations point out the formation of a borosilicate vitreous phase due to the dissolution process of B 4C in contact with a native superficial silica layer surrounding the SiC grains. The resulting liquid phase leads to an abnormal grain growth coupled with undensifying process.</description><subject>Applied sciences</subject><subject>Boron</subject><subject>Building materials. Ceramics. Glasses</subject><subject>Carbon</subject><subject>Ceramic industries</subject><subject>Chemical industry and chemicals</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>Grain growth</subject><subject>Materials</subject><subject>SiC</subject><subject>Sintering</subject><subject>SPS</subject><subject>Structural ceramics</subject><subject>Technical ceramics</subject><issn>0955-2219</issn><issn>1873-619X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqNkM1q3DAUhUVpodM072AKDXRh90qyLSubEiZ_hYGWTgrdiWv5utHUY00kT0ofKy-SZ6rMhNBlQSAQn87hfIy941Bw4PXHTbGhfbAUcBu9LQRAUwAvAMQLtuCNknnN9Y-XbAG6qnIhuH7N3sS4AeAKtF6wT9_8QJnvs9YHP2bpTLeUrXcYfmVfB4xbzNZunCi48eeM4Zg9PuRrt8x2_ndH4S171eMQ6fjpPmLfLy9ultf56svV5-XZKrel4lNurdJ1I6VurCaETrYo0EKFGlrNa61kL6To615j22uBjbBVW5dl2SnqOlvKI_bhkHuLg9kFt8Xwx3h05vpsZea3NFmlfeqeJ_bkwO6Cv9tTnMzWRUvDgCP5fTSyTJqqUiTw9ADa4GMM1D8nczCzX7Mx__o1s18DfC5Ln98_tWC0OPQBR-vic4IAKVValrjzA0dJz72jYKJ1NFrqXCA7mc67_6n7C3i2lpo</recordid><startdate>2008</startdate><enddate>2008</enddate><creator>Maître, A.</creator><creator>Put, A. Vande</creator><creator>Laval, J.P.</creator><creator>Valette, S.</creator><creator>Trolliard, G.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-7425-4121</orcidid></search><sort><creationdate>2008</creationdate><title>Role of boron on the Spark Plasma Sintering of an α-SiC powder</title><author>Maître, A. ; Put, A. Vande ; Laval, J.P. ; Valette, S. ; Trolliard, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c471t-cc79683398c9ea0d3ba2ac05a90b916973f232f6f9abf92a82c5b6444d7eddc43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>Boron</topic><topic>Building materials. Ceramics. Glasses</topic><topic>Carbon</topic><topic>Ceramic industries</topic><topic>Chemical industry and chemicals</topic><topic>Engineering Sciences</topic><topic>Exact sciences and technology</topic><topic>Grain growth</topic><topic>Materials</topic><topic>SiC</topic><topic>Sintering</topic><topic>SPS</topic><topic>Structural ceramics</topic><topic>Technical ceramics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Maître, A.</creatorcontrib><creatorcontrib>Put, A. Vande</creatorcontrib><creatorcontrib>Laval, J.P.</creatorcontrib><creatorcontrib>Valette, S.</creatorcontrib><creatorcontrib>Trolliard, G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Journal of the European Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Maître, A.</au><au>Put, A. Vande</au><au>Laval, J.P.</au><au>Valette, S.</au><au>Trolliard, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of boron on the Spark Plasma Sintering of an α-SiC powder</atitle><jtitle>Journal of the European Ceramic Society</jtitle><date>2008</date><risdate>2008</risdate><volume>28</volume><issue>9</issue><spage>1881</spage><epage>1890</epage><pages>1881-1890</pages><issn>0955-2219</issn><eissn>1873-619X</eissn><abstract>This study deals with the role of non-oxide sintering aids such as boron carbide (B 4C) or – free boron (B) plus free carbon (C) – on the Spark Plasma Sintering treatment of silicon carbide. The results so obtained clearly show that free boron plus free carbon additions lead to the higher densification rates. This favourable behaviour with regards to the densification kinetics is accompanied by the absence of any abnormal grain growth. At the opposite, boron carbide additions do not significantly raise the densification kinetic after SPS treatment of SiC in comparison to pure silicon carbide. In this case, TEM investigations point out the formation of a borosilicate vitreous phase due to the dissolution process of B 4C in contact with a native superficial silica layer surrounding the SiC grains. The resulting liquid phase leads to an abnormal grain growth coupled with undensifying process.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.jeurceramsoc.2008.01.002</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-7425-4121</orcidid><oa>free_for_read</oa></addata></record>
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identifier ISSN: 0955-2219
ispartof Journal of the European Ceramic Society, 2008, Vol.28 (9), p.1881-1890
issn 0955-2219
1873-619X
language eng
recordid cdi_hal_primary_oai_HAL_hal_00272217v1
source Elsevier
subjects Applied sciences
Boron
Building materials. Ceramics. Glasses
Carbon
Ceramic industries
Chemical industry and chemicals
Engineering Sciences
Exact sciences and technology
Grain growth
Materials
SiC
Sintering
SPS
Structural ceramics
Technical ceramics
title Role of boron on the Spark Plasma Sintering of an α-SiC powder
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T10%3A53%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Role%20of%20boron%20on%20the%20Spark%20Plasma%20Sintering%20of%20an%20%CE%B1-SiC%20powder&rft.jtitle=Journal%20of%20the%20European%20Ceramic%20Society&rft.au=Ma%C3%AEtre,%20A.&rft.date=2008&rft.volume=28&rft.issue=9&rft.spage=1881&rft.epage=1890&rft.pages=1881-1890&rft.issn=0955-2219&rft.eissn=1873-619X&rft_id=info:doi/10.1016/j.jeurceramsoc.2008.01.002&rft_dat=%3Cproquest_hal_p%3E34008542%3C/proquest_hal_p%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c471t-cc79683398c9ea0d3ba2ac05a90b916973f232f6f9abf92a82c5b6444d7eddc43%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=34008542&rft_id=info:pmid/&rfr_iscdi=true