Electrical characterizations of paraelectric BST thin films up to 1 THz : realization of microwave phase shifters

BST thin films have been deposited with a sol-gel technique on 4cm 2 sapphire. Electrical characterizations have been performed in a very large frequency range. From 1 kHz to 500 GHz, the dielectric constant ϵ r is around 300 with quasi no frequency dispersion. In the 500 GHz to 1 THz range, the exi...

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Bibliographic Details
Published in:Ferroelectrics 2007, Vol.353, p.29-37
Main Authors: Vélu, Gabriel, Houzet, Gregory, Burgnies, Ludovic, Carru, Jean-Claude, Marteau, Aurélien, Blary, Karine, Lippens, Didier, Mounaix, Patrick, Tondusson, Marc, Nguema Agnandji, Edwin
Format: Article
Language:English
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Engineering Sciences
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Summary:BST thin films have been deposited with a sol-gel technique on 4cm 2 sapphire. Electrical characterizations have been performed in a very large frequency range. From 1 kHz to 500 GHz, the dielectric constant ϵ r is around 300 with quasi no frequency dispersion. In the 500 GHz to 1 THz range, the existence of a Debye relaxation mode is postulated. Varactors made with these BST films show a decrease of their capacitance by a factor of about 1.7 under 40 volts of bias. Phaseshifters have been realized with these varactors: a bias of 40 volts at 30 GHz permits to obtain a phaseshift of 360 degrees.
ISSN:0015-0193
DOI:10.1080/00150190701367036