Determination of transport coefficients by transient photoconductivity measurements

The purpose of this paper is to describe a new experimental method which allows to obtaine the drift velocity, the diffusion coefficient and the life time of minority carriers in semiconductors of usual resistivity. These coefficients are measured using transient photoconductivity response.

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Bibliographic Details
Published in:Physica B + C 1985-01, Vol.129 (1), p.524-526
Main Authors: Gasquet, D., Nougier, J.P., Gineste, G.
Format: Article
Language:English
Subjects:
Electronics
Engineering Sciences
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Description
Summary:The purpose of this paper is to describe a new experimental method which allows to obtaine the drift velocity, the diffusion coefficient and the life time of minority carriers in semiconductors of usual resistivity. These coefficients are measured using transient photoconductivity response.
ISSN:0378-4363
DOI:10.1016/0378-4363(85)90637-0