Minority carrier injection in GeAg Schottky diodes

The J- V characteristics at T = 300°K for Schottky barrier AgGe(N) are presented, the resistivity of the germanium substrate being ρ = 0·23 Ω cm and ρ = 10 Ω cm . The values of n ( J∼ exp ( qV/ nkT)) greater than unity found in the J- V characteristics are attributed to minority carrier injection p...

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Bibliographic Details
Published in:Solid-state electronics 1976-01, Vol.19 (4), p.289-290
Main Authors: Manifacier, J.C., Fillard, J.P.
Format: Article
Language:English
Subjects:
Electronics
Engineering Sciences
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Summary:The J- V characteristics at T = 300°K for Schottky barrier AgGe(N) are presented, the resistivity of the germanium substrate being ρ = 0·23 Ω cm and ρ = 10 Ω cm . The values of n ( J∼ exp ( qV/ nkT)) greater than unity found in the J- V characteristics are attributed to minority carrier injection phenomenon. The observation of the series resistance modulation for the higher injection levels confirms this hypothesis.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(76)90024-1