Analytical model of high-frequency noise spectrum in Schottky-barrier diodes

We propose an analytical model for the high-frequency noise of Schottky-barrier diodes (SBD). The high-frequency spectrum is shown to be governed by collective motions of carriers in the neutral region of the SBD caused by the self-consistent electric field. The model is validated by comparison with...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2005-01, Vol.26 (1), p.2-4
Main Authors: Shiktorov, P., Starikov, E., Gruzinskis, V., Reggiani, L., Varani, L., Vaissiere, J.C.
Format: Article
Language:English
Subjects:
Acoustical engineering
Analytical models
Applied sciences
Diodes
Electronics
Engineering Sciences
Exact sciences and technology
Fluctuations
Gallium arsenide
High-frequency noise
Low-frequency noise
Physics
Resonance
Schottky diodes
Schottky-barrier diodes
Semiconductor device noise
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
terahertz (THz) radiation
Voltage
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We propose an analytical model for the high-frequency noise of Schottky-barrier diodes (SBD). The high-frequency spectrum is shown to be governed by collective motions of carriers in the neutral region of the SBD caused by the self-consistent electric field. The model is validated by comparison with Monte Carlo simulations of GaAs SBDs operating from barrier-limited to flatband conditions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.840396