Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma

Energy exchanges due to chemical reactions between a silicon surface and a SF6 plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those obtained when only few reactions occur at the surface to show the part of chemical reactions. At 800 W,...

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Bibliographic Details
Published in:Applied physics letters 2008-09, Vol.93 (13)
Main Authors: Dussart, R., Thomann, A. L., Pichon, L. E., Bedra, L., Semmar, N., Lefaucheux, P., Mathias, J., Tessier, Y.
Format: Article
Language:English
Subjects:
Condensed Matter
Engineering Sciences
Materials Science
Physics
Plasmas
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Summary:Energy exchanges due to chemical reactions between a silicon surface and a SF6 plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those obtained when only few reactions occur at the surface to show the part of chemical reactions. At 800 W, the measured energy flux due to chemical reactions is estimated at about 7 W cm−2 against 0.4 W cm−2 for ion bombardment and other contributions. Time evolution of the HFM signal is also studied. The molar enthalpy of the reaction giving SiF4 molecules was evaluated and is consistent with values given in literature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2995988