Copper diffusion in TaN-based thin layers

The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusio...

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Bibliographic Details
Published in:Applied surface science 2008-07, Vol.254 (18), p.5670-5674
Main Authors: Nazon, J., Fraisse, B., Sarradin, J., Fries, S.G., Tedenac, J.C., Fréty, N.
Format: Article
Language:English
Subjects:
Chemical interdiffusion
diffusion barriers
Chemical Sciences
Condensed matter: structure, mechanical and thermal properties
Diffusion
Diffusion in solids
Diffusion
interface formation
Exact sciences and technology
In situ glancing analysis
Material chemistry
Microstructure
Physical properties of thin films, nonelectronic
Physics
Reactive sputtering
Solid surfaces and solid-solid interfaces
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Tantalum nitride
Thermal stability
thermal effects
Thin film structure and morphology
Transport properties of condensed matter (nonelectronic)
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Summary:The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773–973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2008.03.015