Chemical and physical characterization of LaNiO3 thin films deposited by sputtering for top and bottom electrodes in ferroelectric structure

• Published in: Journal of crystal growth 2008-07, Vol.310 (15), p.3596-3603
• Main Authors: DETALLE, M, REMIENS, D
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2008.04.053

LaNiO3 thin films were deposited by sputtering on Si/SiO2 substrates with and without heating of the substrate holder. Cold-deposited films were crystallized by conventional annealing and the study revealed an optimal annealing temperature of 700 deg C with a stoichiometric La/Ni ratio, a main (1 1 0) orientation and a resistivity value of 4.10-6 Omega m. In-situ crystallized LaNiO3 thin films were optimal for a deposition at 450 deg C with 20% oxygen with a La/Ni ratio of 1.25. The main orientation was (1 0 0) and resistivity was 2.5X10-5 Omega m. This value could be improved with the help of a conventional annealing, down to 9X10-6 Omega m. The use of such a material is very much adapted for top and bottom electrodes in ferroelectric structures.