PMN-PT thin films grown by sputtering on silicon substrate: influence of the annealing temperature on the physico-chemical and electrical properties of the films

• Published in: Research on chemical intermediates 2008-01, Vol.34 (2-3), p.201-215
• Main Authors: Rémiens, D., Detalle, M., Herdier, R., Soyer, C., Wang, Genshui, Jenkins, David, Roussel, Pascal
• Format: Article
• Language: English
• Subjects: Catalysis; Chemistry; Chemistry and Materials Science; Inorganic Chemistry; Physical Chemistry
• ISSN: 0922-6168; 1568-5675
• DOI: 10.1163/156856708783623465

Studies of piezoelectric and electrostrictive properties of (1− x )PMN- x PT thin films were carried out. We have chosen the compositions 90/10 and 70/30, which exhibit, respectively, mostly electrostrictive and piezoelectric behaviour in bulk material. Annealing temperature effects on PMN-PT structural, dielectric, ferroelectric and electromechanical properties have been investigated. We demonstrate that with conventional annealing the pure perovskite phase can be obtained at very low temperature (400°C) without any pyrochlore phase for the two compositions. We show that electromechanical response is a mix between electrostrictive and piezoelectric response for the two compositions. However, as can be easily understood, piezoelectric contribution is larger for 70/30. It is shown that electrical responses of the films obtained at 400°C are largely satisfied for many applications; for higher annealing temperature we observe an enhance of the electrical properties due to an improvement of the material quality in terms of crystalline structure.