Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a -plane GaN

Time-resolved cathodoluminescence at 27 K has been performed on a -plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I 1 -type basal stacking faults (BSFs)] in relation to the local density...

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Bibliographic Details
Published in:Applied physics letters 2009-05, Vol.94 (20), p.201115-201115-3
Main Authors: Corfdir, P., Ristić, J., Lefebvre, P., Zhu, T., Martin, D., Dussaigne, A., Ganière, J. D., Grandjean, N., Deveaud-Plédran, B.
Format: Article
Language:English
Subjects:
Condensed Matter
Engineering Sciences
Materials Science
Micro and nanotechnologies
Microelectronics
Other
Physics
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Summary:Time-resolved cathodoluminescence at 27 K has been performed on a -plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I 1 -type basal stacking faults (BSFs)] in relation to the local density in BSFs. We describe the slow exciton capture rate on isolated BSFs by a diffusion model involving donors via a hopping process. Where BSFs are organized into bundles, we relate the shorter rise time to intra-BSF localization processes and the multiexponential decay to the type-II band alignment of BSFs in wurtzite GaN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3142396