Modeling the XPS Si 2p core-level intensities of silicon nanocrystals for determination of oxide shell thickness

We have developed a simplified model of the core and oxide shell XPS intensities of 5‐nm diameter Si nanocrystals for determining the shell thickness. The model is based on a cylindrical shape of the nanocrystals that allows the use of Himpsel's model for planar Si oxidation, and takes into acc...

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Bibliographic Details
Published in:Surface and interface analysis 2006-04, Vol.38 (4), p.486-488
Main Authors: Renault, O., Marlier, R., Barrett, N. T., Martinez, E., Baron, T., Gely, M., De Salvo, B.
Format: Article
Language:English
Subjects:
attenuation model
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
nanocrystals
Physics
silicon
synchrotron radiation
XPS
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Summary:We have developed a simplified model of the core and oxide shell XPS intensities of 5‐nm diameter Si nanocrystals for determining the shell thickness. The model is based on a cylindrical shape of the nanocrystals that allows the use of Himpsel's model for planar Si oxidation, and takes into account different escape depths for photoelectrons emitted by the core and the shell. The experimental core/shell intensity ratio is obtained from high‐resolution XPS spectra recorded with synchrotron radiation (photon energy 320 eV). The resulting calculated shell thickness is found to vary over the 0.74–1.32 nm range in a consistent way, according to the surface treatment performed on the nanocrystals. Copyright © 2006 John Wiley & Sons, Ltd.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.2223