Investigations of organic light emitting diodes with CdSe(ZnS) quantum dots

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.307-311
• Main Authors: Lee, C.W., Chou, C.H., Huang, J.H., Hsu, C.S., Nguyen, T.P.
• Format: Article
• Language: English
• Subjects: Cadmium selenide; Co-polymer; Condensed Matter; Materials Science; Organic light emitting diodes; Physics; Quantum dots
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2007.09.068

In this study, we report results on investigation of bilayer light emitting diodes made of organic capped CdSe(ZnS) core/shell type nanocrystals and poly[2-phenyl-3-(9,9-dihexyl-fluoren-2-yl) phenylene vinylene]-co-[2-methoxy-5-(2′-ethylhexyloxy) phenylene vinylene] (FP-PPV-co-MEH-PPV) electroluminescent co-polymer. Light emitting diodes of structure: indium-tin-oxide (ITO)/polyethylene dioxythiophene: polystyrene sulfonate (PEDOT:PSS)/FP-PPV-co-MEH-PPV/Ca/Al devices have been fabricated and studied. The co-polymer device emits a yellow light with a maximum brightness of 3949 cd/m 2 and a maximum external quantum efficiency of 0.27 cd/A at 10 V. Incorporation of CdSe(ZnS) quantum dots into the active polymer film resulted in an increase in device brightness, which reached 8192 cd/m 2 and in external quantum efficiency, which became 1.27 cd/A at 7 V with a lower turn-on voltage. The results indicate that CdSe(ZnS) quantum dots improved significantly the emission of the devices by modifying the injection and transport of the charge carriers. We suggest a non-uniform dispersion of QDs in the co-polymer layer with carrier blocking process by the particles, which produced a balanced charge distribution inside the co-polymer, and thus increased the emission efficiency.