Evidence for a modified-stannite crystal structure in wide band gap Cu-poor CuIn1−xGaxSe2: Impact on the optical properties

The crystal structure of high Ga-content CuIn1−xGaxSe2 (CIGSe) compounds has been further investigated with the help of single crystal x-ray diffraction technique. It is known that CIGSe compounds adopt the chalcopyrite crystal structure. In the case of Cu-poor, Ga-rich CIGSe, the present study show...

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Bibliographic Details
Published in:Applied physics letters 2008-06, Vol.92 (24)
Main Authors: Souilah, M., Lafond, A., Barreau, N., Guillot-Deudon, C., Kessler, J.
Format: Article
Language:English
Subjects:
Condensed Matter
Materials Science
Physics
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Summary:The crystal structure of high Ga-content CuIn1−xGaxSe2 (CIGSe) compounds has been further investigated with the help of single crystal x-ray diffraction technique. It is known that CIGSe compounds adopt the chalcopyrite crystal structure. In the case of Cu-poor, Ga-rich CIGSe, the present study shows that an alternative structure should be considered. This structure is derived from that of stannite in which there is a Ga∕In segregation on two different atomic planes. The diffuse reflectance measurements of the Cu-poor compound reveal a slightly different band gap and a smoother transition compared with those of the stoichiometric compound.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2944254