Study of trap states in polyfluorene based devices by using TSC technique

The trap states in poly(9,9-dihexylfluorene-co- N, N-di(9,9-dihexyl-2-fluorenyl)- N-phenylamine) (PF-N-Ph) based light emitting diodes have been investigated by using the thermally stimulated current (TSC) technique in the temperature range of 90–320 K. The studied structure consisted of indium-tin-...

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Bibliographic Details
Published in:Thin solid films 2008-08, Vol.516 (20), p.7209-7213
Main Authors: Renaud, C., Huang, C.H., Lee, C.W., Le Rendu, P., Nguyen, T.P.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed Matter
Electronics
Exact sciences and technology
Materials Science
Optoelectronic devices
Physics
Polyfluorene derivative
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thermally stimulated currents
Traps
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Summary:The trap states in poly(9,9-dihexylfluorene-co- N, N-di(9,9-dihexyl-2-fluorenyl)- N-phenylamine) (PF-N-Ph) based light emitting diodes have been investigated by using the thermally stimulated current (TSC) technique in the temperature range of 90–320 K. The studied structure consisted of indium-tin-oxide/polyethylene-dioxythiophene: polystyrene-sulfonate/PF-N-Ph/Al. Four traps centers denoted as A, B, C, and D trap types have been identified with densities in the range of 10 16–10 17 cm − 3 . Study of the dependence of TSC characteristics on the device polarity suggested that the A, C and D type traps are electron traps while the B type traps are hole traps. They can be described by Gaussian distributions centered on mean trap levels.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2007.12.063