Correlation between Si-related and erbium photoluminescence bands and determination of erbium effective excitation cross section in SiO2 films

Er-doped SiOx (x∼1) films were prepared by electron gun evaporation. After thermal annealing at 1000°C, all samples showed a Si-related photoluminescence (PL) band at 920nm (1.3eV); the samples containing Er showed an Er PL band at 1530nm. The correlation between these two PL bands was studied by ti...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2005-07, Vol.98 (1), p.013544-5
Main Authors: Kao, C.-C., Barthou, C., Gallas, B., Fisson, S., Vuye, G., Rivory, J., Al Choueiry, A., Jurdyc, A.-M., Jacquier, B., Bigot, L.
Format: Article
Language:English
Subjects:
Condensed Matter
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Er-doped SiOx (x∼1) films were prepared by electron gun evaporation. After thermal annealing at 1000°C, all samples showed a Si-related photoluminescence (PL) band at 920nm (1.3eV); the samples containing Er showed an Er PL band at 1530nm. The correlation between these two PL bands was studied by time decay measurements of the Si-related PL band. The lifetime of the Si-related PL band was reduced by Er doping. This reduction increased with increasing Er concentration. The Er effective excitation cross section in SiO2 films containing Si nanocrystals was estimated to be in the order of 10−16cm2 and showed a dependence on the Er concentration.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1968429