Bandgap properties of the indium sulfide thin-films grown by co-evaporation

In the present study the optical properties of co-evaporated indium sulfide thin films are investigated. Before being optically characterized, the composition as well as the crystalline properties of the film have been checked with the help of energy dispersive spectroscopy (EDX) and X-Ray diffracti...

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Bibliographic Details
Published in:Thin solid films 2009-02, Vol.517 (7), p.2316-2319
Main Authors: Barreau, N., Mokrani, A., Couzinié-Devy, F., Kessler, J.
Format: Article
Language:English
Subjects:
Bandgap
Condensed Matter
DFT
Electronic band structure calculation
Indium sulfide
Materials Science
Physics
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Summary:In the present study the optical properties of co-evaporated indium sulfide thin films are investigated. Before being optically characterized, the composition as well as the crystalline properties of the film have been checked with the help of energy dispersive spectroscopy (EDX) and X-Ray diffraction (XRD) analyses. The optical absorption coefficient α of this indium sulfide film has been deduced from reflectivity R(λ) and transmission T(λ) measurements. The fit of the curve representing α(hν) suggests that the β-In 2S 3 has an indirect bandgap of 2.01 eV. Density functional theory (DFT) calculations are performed on this indium sulfide compound, using TB-LMTO code. Through these band structure investigations, an indirect bandgap is predicted as observed experimentally. The top of the valence band is mainly formed by the orbitals of the sulfur atoms. This observation suggests that an over or under stoichiometry in sulfur may affect both the nature and the width of the indium sulfide bandgap.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2008.11.001