Loading…
Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging
We report on the characterization, thanks to Raman spectroscopy and imaging of tensely strained Si films pseudomorphically grown on (001), (110), and (111) SiGe virtual substrates. The samples studied here are those described in the work of Destefanis [ J. Appl. Phys 106 , 043508 ( 2009 ) ]. They co...
Saved in:
Published in: | Journal of applied physics 2010-01, Vol.107 (1), p.013512-013512-10 |
---|---|
Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c383t-7f29272bd59511485c9ac5ccc80681672fb9308a159540e32eb66af16f71ad933 |
---|---|
cites | cdi_FETCH-LOGICAL-c383t-7f29272bd59511485c9ac5ccc80681672fb9308a159540e32eb66af16f71ad933 |
container_end_page | 013512-10 |
container_issue | 1 |
container_start_page | 013512 |
container_title | Journal of applied physics |
container_volume | 107 |
creator | Mermoux, M. Crisci, A. Baillet, F. Destefanis, V. Rouchon, D. Papon, A. M. Hartmann, J. M. |
description | We report on the characterization, thanks to Raman spectroscopy and imaging of tensely strained Si films pseudomorphically grown on (001), (110), and (111) SiGe virtual substrates. The samples studied here are those described in the work of
Destefanis
[
J. Appl. Phys
106
,
043508
(
2009
)
]. They consist in 17-nm-thick strained Si layers grown at
650
°
C
with
SiH
4
as a gaseous precursor on top of polished SiGe virtual substrates of various surface orientations. We first derived the exact component array of the strain/stress field along the different growth directions. Because the relation between strain or stress and the Raman frequencies are complex, we also derive the strain-shift coefficients for the different substrate orientations considered in this work and the polarization selection rules. Visible and near-UV Raman spectroscopies were used to extract the in-plane lattice parameter of the SiGe virtual substrates and the tensile strain in the thin Si epitaxial layers on top. We have notably investigated thanks to Raman imaging the in-plane distribution of strain in Si layer/SiGe buffer stacks grown on (110) and (111) Si substrates. Original surface arrays have been highlighted for each surface orientation. Promising results have been obtained for (110) SiGe virtual substrates in terms of strain and layer quality while the technological usefulness of the (111) ones is more questionable. |
doi_str_mv | 10.1063/1.3272824 |
format | article |
fullrecord | <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00456991v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_00456991v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-7f29272bd59511485c9ac5ccc80681672fb9308a159540e32eb66af16f71ad933</originalsourceid><addsrcrecordid>eNp1kUtLAzEQx4MoWKsHv0GOFtw2s-nuJgcPRbQVCoLV8zLNZmtku7skabV-Fb-s6YN6Egbm9ZvJ40_INbA-sJQPoM_jLBbx8IR0gAkZZUnCTkmHsRgiITN5Ti6c-2AMQHDZIT8zb9HUNJhujccvgxWdmcHMjDVdWCx0QeerstSWOm9Xyq-sdqHRfNa0qQN5A4z1bncBbAOsi30CPdq03iisqg3Va6xW6LfLNrRtKrTmOyQvuMSaulYrbxunmnazmzdLXJh6cUnOSqycvjr4Lnl7fHi9n0TT5_HT_WgaKS64j7IyluHN8yKRCcBQJEqiSpRSgqUC0iwu55IzgRD6Q6Z5rOdpiiWkZQZYSM67pLff-45V3tpwut3kDZp8Mprm2xpjwySVEtbwx6pwYWd1eRwAlm8VyCE_KBDYuz3rVPhZb5r6f3gvQx7sKAP_Bb2Oi3E</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Mermoux, M. ; Crisci, A. ; Baillet, F. ; Destefanis, V. ; Rouchon, D. ; Papon, A. M. ; Hartmann, J. M.</creator><creatorcontrib>Mermoux, M. ; Crisci, A. ; Baillet, F. ; Destefanis, V. ; Rouchon, D. ; Papon, A. M. ; Hartmann, J. M.</creatorcontrib><description>We report on the characterization, thanks to Raman spectroscopy and imaging of tensely strained Si films pseudomorphically grown on (001), (110), and (111) SiGe virtual substrates. The samples studied here are those described in the work of
Destefanis
[
J. Appl. Phys
106
,
043508
(
2009
)
]. They consist in 17-nm-thick strained Si layers grown at
650
°
C
with
SiH
4
as a gaseous precursor on top of polished SiGe virtual substrates of various surface orientations. We first derived the exact component array of the strain/stress field along the different growth directions. Because the relation between strain or stress and the Raman frequencies are complex, we also derive the strain-shift coefficients for the different substrate orientations considered in this work and the polarization selection rules. Visible and near-UV Raman spectroscopies were used to extract the in-plane lattice parameter of the SiGe virtual substrates and the tensile strain in the thin Si epitaxial layers on top. We have notably investigated thanks to Raman imaging the in-plane distribution of strain in Si layer/SiGe buffer stacks grown on (110) and (111) Si substrates. Original surface arrays have been highlighted for each surface orientation. Promising results have been obtained for (110) SiGe virtual substrates in terms of strain and layer quality while the technological usefulness of the (111) ones is more questionable.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3272824</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Chemical Sciences ; Material chemistry</subject><ispartof>Journal of applied physics, 2010-01, Vol.107 (1), p.013512-013512-10</ispartof><rights>2010 American Institute of Physics</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-7f29272bd59511485c9ac5ccc80681672fb9308a159540e32eb66af16f71ad933</citedby><cites>FETCH-LOGICAL-c383t-7f29272bd59511485c9ac5ccc80681672fb9308a159540e32eb66af16f71ad933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00456991$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Mermoux, M.</creatorcontrib><creatorcontrib>Crisci, A.</creatorcontrib><creatorcontrib>Baillet, F.</creatorcontrib><creatorcontrib>Destefanis, V.</creatorcontrib><creatorcontrib>Rouchon, D.</creatorcontrib><creatorcontrib>Papon, A. M.</creatorcontrib><creatorcontrib>Hartmann, J. M.</creatorcontrib><title>Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging</title><title>Journal of applied physics</title><description>We report on the characterization, thanks to Raman spectroscopy and imaging of tensely strained Si films pseudomorphically grown on (001), (110), and (111) SiGe virtual substrates. The samples studied here are those described in the work of
Destefanis
[
J. Appl. Phys
106
,
043508
(
2009
)
]. They consist in 17-nm-thick strained Si layers grown at
650
°
C
with
SiH
4
as a gaseous precursor on top of polished SiGe virtual substrates of various surface orientations. We first derived the exact component array of the strain/stress field along the different growth directions. Because the relation between strain or stress and the Raman frequencies are complex, we also derive the strain-shift coefficients for the different substrate orientations considered in this work and the polarization selection rules. Visible and near-UV Raman spectroscopies were used to extract the in-plane lattice parameter of the SiGe virtual substrates and the tensile strain in the thin Si epitaxial layers on top. We have notably investigated thanks to Raman imaging the in-plane distribution of strain in Si layer/SiGe buffer stacks grown on (110) and (111) Si substrates. Original surface arrays have been highlighted for each surface orientation. Promising results have been obtained for (110) SiGe virtual substrates in terms of strain and layer quality while the technological usefulness of the (111) ones is more questionable.</description><subject>Chemical Sciences</subject><subject>Material chemistry</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kUtLAzEQx4MoWKsHv0GOFtw2s-nuJgcPRbQVCoLV8zLNZmtku7skabV-Fb-s6YN6Egbm9ZvJ40_INbA-sJQPoM_jLBbx8IR0gAkZZUnCTkmHsRgiITN5Ti6c-2AMQHDZIT8zb9HUNJhujccvgxWdmcHMjDVdWCx0QeerstSWOm9Xyq-sdqHRfNa0qQN5A4z1bncBbAOsi30CPdq03iisqg3Va6xW6LfLNrRtKrTmOyQvuMSaulYrbxunmnazmzdLXJh6cUnOSqycvjr4Lnl7fHi9n0TT5_HT_WgaKS64j7IyluHN8yKRCcBQJEqiSpRSgqUC0iwu55IzgRD6Q6Z5rOdpiiWkZQZYSM67pLff-45V3tpwut3kDZp8Mprm2xpjwySVEtbwx6pwYWd1eRwAlm8VyCE_KBDYuz3rVPhZb5r6f3gvQx7sKAP_Bb2Oi3E</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Mermoux, M.</creator><creator>Crisci, A.</creator><creator>Baillet, F.</creator><creator>Destefanis, V.</creator><creator>Rouchon, D.</creator><creator>Papon, A. M.</creator><creator>Hartmann, J. M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>20100101</creationdate><title>Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging</title><author>Mermoux, M. ; Crisci, A. ; Baillet, F. ; Destefanis, V. ; Rouchon, D. ; Papon, A. M. ; Hartmann, J. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-7f29272bd59511485c9ac5ccc80681672fb9308a159540e32eb66af16f71ad933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Chemical Sciences</topic><topic>Material chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mermoux, M.</creatorcontrib><creatorcontrib>Crisci, A.</creatorcontrib><creatorcontrib>Baillet, F.</creatorcontrib><creatorcontrib>Destefanis, V.</creatorcontrib><creatorcontrib>Rouchon, D.</creatorcontrib><creatorcontrib>Papon, A. M.</creatorcontrib><creatorcontrib>Hartmann, J. M.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mermoux, M.</au><au>Crisci, A.</au><au>Baillet, F.</au><au>Destefanis, V.</au><au>Rouchon, D.</au><au>Papon, A. M.</au><au>Hartmann, J. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging</atitle><jtitle>Journal of applied physics</jtitle><date>2010-01-01</date><risdate>2010</risdate><volume>107</volume><issue>1</issue><spage>013512</spage><epage>013512-10</epage><pages>013512-013512-10</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We report on the characterization, thanks to Raman spectroscopy and imaging of tensely strained Si films pseudomorphically grown on (001), (110), and (111) SiGe virtual substrates. The samples studied here are those described in the work of
Destefanis
[
J. Appl. Phys
106
,
043508
(
2009
)
]. They consist in 17-nm-thick strained Si layers grown at
650
°
C
with
SiH
4
as a gaseous precursor on top of polished SiGe virtual substrates of various surface orientations. We first derived the exact component array of the strain/stress field along the different growth directions. Because the relation between strain or stress and the Raman frequencies are complex, we also derive the strain-shift coefficients for the different substrate orientations considered in this work and the polarization selection rules. Visible and near-UV Raman spectroscopies were used to extract the in-plane lattice parameter of the SiGe virtual substrates and the tensile strain in the thin Si epitaxial layers on top. We have notably investigated thanks to Raman imaging the in-plane distribution of strain in Si layer/SiGe buffer stacks grown on (110) and (111) Si substrates. Original surface arrays have been highlighted for each surface orientation. Promising results have been obtained for (110) SiGe virtual substrates in terms of strain and layer quality while the technological usefulness of the (111) ones is more questionable.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3272824</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-8979 |
ispartof | Journal of applied physics, 2010-01, Vol.107 (1), p.013512-013512-10 |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_hal_primary_oai_HAL_hal_00456991v1 |
source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
subjects | Chemical Sciences Material chemistry |
title | Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T15%3A13%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Strain%20in%20epitaxial%20Si/SiGe%20graded%20buffer%20structures%20grown%20on%20Si(100),%20Si(110),%20and%20Si(111)%20optically%20evaluated%20by%20polarized%20Raman%20spectroscopy%20and%20imaging&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Mermoux,%20M.&rft.date=2010-01-01&rft.volume=107&rft.issue=1&rft.spage=013512&rft.epage=013512-10&rft.pages=013512-013512-10&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.3272824&rft_dat=%3Chal_cross%3Eoai_HAL_hal_00456991v1%3C/hal_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c383t-7f29272bd59511485c9ac5ccc80681672fb9308a159540e32eb66af16f71ad933%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |