Thermal Stability of TaN-Based Thin Layers for Cu Metallization

The diffusion of Cu through TaN‐based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayer barrier of 50 nm:50 nm:50 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN‐based thin layers w...

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Bibliographic Details
Published in:Plasma processes and polymers 2009-06, Vol.6 (S1), p.S844-S848
Main Authors: Nazon, Julien, Berger, Marie-Hélène, Sarradin, Joël, Tedenac, Jean-Claude, Fréty, Nicole
Format: Article
Language:English
Subjects:
Barriers
Chemical Sciences
Copper
DIFFUSION
Diffusion layers
Material chemistry
METALLIZING (FOR PLATING)
Multilayers
nitrides
sputtering
Tantalum
TEM
THERMAL STABILITY
THIN FILMS
X-ray
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Summary:The diffusion of Cu through TaN‐based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayer barrier of 50 nm:50 nm:50 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN‐based thin layers were determined from glancing incidence angle X‐ray diffraction and transmission electron microscopy, conducted in the temperature range of 773–973 K. The TaN/Ta/TaN barrier appeared to be more efficient than the TaN single layer in preventing Cu diffusion.
ISSN:1612-8850
1612-8869
DOI:10.1002/ppap.200932107