Atomic-scale study of the role of carbon on boron clustering

Boron (BF 2, 20 keV, 3.14/cm 2) and carbon (13 keV, 10 15/cm 2) implanted silicon annealed at 800 °C during 30 min or at 1000 °C during 10 s has been investigated using a laser-assisted wide-angle tomographic atom probe (LaWaTAP) instrument. Boron–silicon clusters containing ~ 1.3 at.% of boron atom...

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Bibliographic Details
Published in:Thin solid films 2010-02, Vol.518 (9), p.2406-2408
Main Authors: Philippe, T., Duguay, S., Grob, J.J., Mathiot, D., Blavette, D.
Format: Article
Language:English
Subjects:
Boron
Carbon
Clustering
Condensed Matter
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in germanium and silicon
Exact sciences and technology
Laser atom probe tomography
Physics
Structure of solids and liquids
crystallography
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Summary:Boron (BF 2, 20 keV, 3.14/cm 2) and carbon (13 keV, 10 15/cm 2) implanted silicon annealed at 800 °C during 30 min or at 1000 °C during 10 s has been investigated using a laser-assisted wide-angle tomographic atom probe (LaWaTAP) instrument. Boron–silicon clusters containing ~ 1.3 at.% of boron atoms have been observed in boron implanted silicon with a concentration exceeding the solubility limit. Often identified as BICs, they are interpreted as a metastable phase. Furthermore, addition of carbon clearly reduced the clustering of boron. This was interpreted as a diminution of boron diffusion or as an increase of the solubility limit of boron. Carbon–silicon clusters containing ~ 1.5 at.% of carbon atoms were observed, maybe the precursors of the SiC phase.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2009.08.022