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Atomic-scale study of the role of carbon on boron clustering
Boron (BF 2, 20 keV, 3.14/cm 2) and carbon (13 keV, 10 15/cm 2) implanted silicon annealed at 800 °C during 30 min or at 1000 °C during 10 s has been investigated using a laser-assisted wide-angle tomographic atom probe (LaWaTAP) instrument. Boron–silicon clusters containing ~ 1.3 at.% of boron atom...
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| Published in: | Thin solid films 2010-02, Vol.518 (9), p.2406-2408 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c361t-e0113fe3d32fa3b480e5231dd57e7fe4326856d3c05f552a76a346f61357b0ae3 |
| container_end_page | 2408 |
| container_issue | 9 |
| container_start_page | 2406 |
| container_title | Thin solid films |
| container_volume | 518 |
| creator | Philippe, T. Duguay, S. Grob, J.J. Mathiot, D. Blavette, D. |
| description | Boron (BF
2, 20 keV, 3.14/cm
2) and carbon (13 keV, 10
15/cm
2) implanted silicon annealed at 800 °C during 30 min or at 1000 °C during 10 s has been investigated using a laser-assisted wide-angle tomographic atom probe (LaWaTAP) instrument. Boron–silicon clusters containing ~
1.3 at.% of boron atoms have been observed in boron implanted silicon with a concentration exceeding the solubility limit. Often identified as BICs, they are interpreted as a metastable phase. Furthermore, addition of carbon clearly reduced the clustering of boron. This was interpreted as a diminution of boron diffusion or as an increase of the solubility limit of boron. Carbon–silicon clusters containing ~
1.5 at.% of carbon atoms were observed, maybe the precursors of the SiC phase. |
| doi_str_mv | 10.1016/j.tsf.2009.08.022 |
| format | article |
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2, 20 keV, 3.14/cm
2) and carbon (13 keV, 10
15/cm
2) implanted silicon annealed at 800 °C during 30 min or at 1000 °C during 10 s has been investigated using a laser-assisted wide-angle tomographic atom probe (LaWaTAP) instrument. Boron–silicon clusters containing ~
1.3 at.% of boron atoms have been observed in boron implanted silicon with a concentration exceeding the solubility limit. Often identified as BICs, they are interpreted as a metastable phase. Furthermore, addition of carbon clearly reduced the clustering of boron. This was interpreted as a diminution of boron diffusion or as an increase of the solubility limit of boron. Carbon–silicon clusters containing ~
1.5 at.% of carbon atoms were observed, maybe the precursors of the SiC phase.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2009.08.022</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Boron ; Carbon ; Clustering ; Condensed Matter ; Condensed matter: structure, mechanical and thermal properties ; Defects and impurities in crystals; microstructure ; Doping and impurity implantation in germanium and silicon ; Exact sciences and technology ; Laser atom probe tomography ; Physics ; Structure of solids and liquids; crystallography</subject><ispartof>Thin solid films, 2010-02, Vol.518 (9), p.2406-2408</ispartof><rights>2009 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-e0113fe3d32fa3b480e5231dd57e7fe4326856d3c05f552a76a346f61357b0ae3</citedby><cites>FETCH-LOGICAL-c361t-e0113fe3d32fa3b480e5231dd57e7fe4326856d3c05f552a76a346f61357b0ae3</cites><orcidid>0000-0002-7039-6018 ; 0000-0001-6979-2155</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,309,310,314,780,784,789,790,885,23928,23929,25138,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22520785$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00464139$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Philippe, T.</creatorcontrib><creatorcontrib>Duguay, S.</creatorcontrib><creatorcontrib>Grob, J.J.</creatorcontrib><creatorcontrib>Mathiot, D.</creatorcontrib><creatorcontrib>Blavette, D.</creatorcontrib><title>Atomic-scale study of the role of carbon on boron clustering</title><title>Thin solid films</title><description>Boron (BF
2, 20 keV, 3.14/cm
2) and carbon (13 keV, 10
15/cm
2) implanted silicon annealed at 800 °C during 30 min or at 1000 °C during 10 s has been investigated using a laser-assisted wide-angle tomographic atom probe (LaWaTAP) instrument. Boron–silicon clusters containing ~
1.3 at.% of boron atoms have been observed in boron implanted silicon with a concentration exceeding the solubility limit. Often identified as BICs, they are interpreted as a metastable phase. Furthermore, addition of carbon clearly reduced the clustering of boron. This was interpreted as a diminution of boron diffusion or as an increase of the solubility limit of boron. Carbon–silicon clusters containing ~
1.5 at.% of carbon atoms were observed, maybe the precursors of the SiC phase.</description><subject>Boron</subject><subject>Carbon</subject><subject>Clustering</subject><subject>Condensed Matter</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Doping and impurity implantation in germanium and silicon</subject><subject>Exact sciences and technology</subject><subject>Laser atom probe tomography</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kFFLwzAQx4MoOKcfwLe--OBD6yVp0hZ9GUOdMPBFn0OaXlxG146kG-zbm1LZo3DcHcf_f8f9CLmnkFGg8mmbDcFmDKDKoMyAsQsyo2VRpazg9JLMAHJIJVRwTW5C2AIAZYzPyMti6HfOpMHoFpMwHJpT0ttk2GDi-ziJvdG-7rskRt37mE17CAN61_3ckiur24B3f3VOvt9ev5ardP35_rFcrFPDJR1SBEq5Rd5wZjWv8xJQME6bRhRYWMw5k6WQDTcgrBBMF1LzXFpJuShq0Mjn5HHau9Gt2nu30_6keu3UarFW4yx-J3PKqyONWjppje9D8GjPBgpqRKW2KqJSIyoFpYqooudh8uz1yMF63RkXzkbGBIOiFFH3POkwPnt06FUwDjuDjfNoBtX07p8rv_CBfFQ</recordid><startdate>20100226</startdate><enddate>20100226</enddate><creator>Philippe, T.</creator><creator>Duguay, S.</creator><creator>Grob, J.J.</creator><creator>Mathiot, D.</creator><creator>Blavette, D.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-7039-6018</orcidid><orcidid>https://orcid.org/0000-0001-6979-2155</orcidid></search><sort><creationdate>20100226</creationdate><title>Atomic-scale study of the role of carbon on boron clustering</title><author>Philippe, T. ; Duguay, S. ; Grob, J.J. ; Mathiot, D. ; Blavette, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-e0113fe3d32fa3b480e5231dd57e7fe4326856d3c05f552a76a346f61357b0ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Boron</topic><topic>Carbon</topic><topic>Clustering</topic><topic>Condensed Matter</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Doping and impurity implantation in germanium and silicon</topic><topic>Exact sciences and technology</topic><topic>Laser atom probe tomography</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Philippe, T.</creatorcontrib><creatorcontrib>Duguay, S.</creatorcontrib><creatorcontrib>Grob, J.J.</creatorcontrib><creatorcontrib>Mathiot, D.</creatorcontrib><creatorcontrib>Blavette, D.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Philippe, T.</au><au>Duguay, S.</au><au>Grob, J.J.</au><au>Mathiot, D.</au><au>Blavette, D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic-scale study of the role of carbon on boron clustering</atitle><jtitle>Thin solid films</jtitle><date>2010-02-26</date><risdate>2010</risdate><volume>518</volume><issue>9</issue><spage>2406</spage><epage>2408</epage><pages>2406-2408</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Boron (BF
2, 20 keV, 3.14/cm
2) and carbon (13 keV, 10
15/cm
2) implanted silicon annealed at 800 °C during 30 min or at 1000 °C during 10 s has been investigated using a laser-assisted wide-angle tomographic atom probe (LaWaTAP) instrument. Boron–silicon clusters containing ~
1.3 at.% of boron atoms have been observed in boron implanted silicon with a concentration exceeding the solubility limit. Often identified as BICs, they are interpreted as a metastable phase. Furthermore, addition of carbon clearly reduced the clustering of boron. This was interpreted as a diminution of boron diffusion or as an increase of the solubility limit of boron. Carbon–silicon clusters containing ~
1.5 at.% of carbon atoms were observed, maybe the precursors of the SiC phase.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2009.08.022</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0002-7039-6018</orcidid><orcidid>https://orcid.org/0000-0001-6979-2155</orcidid></addata></record> |
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| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2010-02, Vol.518 (9), p.2406-2408 |
| issn | 0040-6090 1879-2731 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_00464139v1 |
| source | Elsevier |
| subjects | Boron Carbon Clustering Condensed Matter Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in germanium and silicon Exact sciences and technology Laser atom probe tomography Physics Structure of solids and liquids crystallography |
| title | Atomic-scale study of the role of carbon on boron clustering |
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