Charge transport in chemically doped 2D graphene

We report on a numerical study of electronic transport in chemically doped 2D graphene materials. By using ab initio calculations, a self-consistent scattering potential is derived for boron and nitrogen substitutions, and a fully quantum-mechanical Kubo-Greenwood approach is used to evaluate the re...

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Bibliographic Details
Published in:Physical review letters 2008-07, Vol.101 (3), p.036808-036808, Article 036808
Main Authors: Lherbier, Aurélien, Blase, X, Niquet, Yann-Michel, Triozon, François, Roche, Stephan
Format: Article
Language:English
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Summary:We report on a numerical study of electronic transport in chemically doped 2D graphene materials. By using ab initio calculations, a self-consistent scattering potential is derived for boron and nitrogen substitutions, and a fully quantum-mechanical Kubo-Greenwood approach is used to evaluate the resulting charge mobilities and conductivities of systems with impurity concentration ranging within [0.5, 4.0]%. Even for a doping concentration as large as 4.0%, the conduction is marginally affected by quantum interference effects, preserving therefore remarkable transport properties, even down to the zero temperature limit. As a result of the chemical doping, electron-hole mobilities and conductivities are shown to become asymmetric with respect to the Dirac point.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.101.036808