High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack

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Published in:Solid-state electronics 2009-04, Vol.53, p.433-437
Main Authors: Lim, T.C., Rozeau, O., Buj, C., Paccaud, M., Lepilliet, Sylvie, Dambrine, Gilles, Danneville, Francois
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container_title Solid-state electronics
container_volume 53
creator Lim, T.C.
Rozeau, O.
Buj, C.
Paccaud, M.
Lepilliet, Sylvie
Dambrine, Gilles
Danneville, Francois
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doi_str_mv 10.1016/j.sse.2008.09.022
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title High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack
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