Gold-free growth of GaAs nanowires on silicon: arrays and polytypism

We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning p...

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Bibliographic Details
Published in:Nanotechnology 2010-09, Vol.21 (38), p.385602-385602
Main Authors: Plissard, Sébastien, Dick, Kimberly A, Larrieu, Guilhem, Godey, Sylvie, Addad, Ahmed, Wallart, Xavier, Caroff, Philippe
Format: Article
Language:English
Subjects:
Arrays
Crystal structure
Crystals
Engineering and Technology
Gallium arsenide
Gallium arsenides
Molecular beam epitaxy
Nano Technology
Nanoteknik
Nanowires
Silicon
Teknik
Zinc
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Summary:We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/21/38/385602