Rigorous extraction tunability of Si-integrated Ba0.3Sr0.7TiO3 thin film up to 60 GHz

400-nm-thick Ba0.3Sr0.7TiO3 thin films are deposited on high resistivity silicon by in situ radio frequency magnetron sputtering. Coplanar waveguides with 1 μm slot width are designed, with accurate knowledge frequency losses behavior, to determine ferroelectric thin-films properties up to 60 GHz. P...

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Bibliographic Details
Published in:Applied physics letters 2010-06, Vol.96 (25), p.252906-1-3
Main Authors: Ponchel, Freddy, Legier, Jean-Fançois, Soyer, Caroline, Rémiens, Denis, Midy, Jean, Lasri, Tuami, Guéguan, Guillaume
Format: Article
Language:English
Subjects:
Physics
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Summary:400-nm-thick Ba0.3Sr0.7TiO3 thin films are deposited on high resistivity silicon by in situ radio frequency magnetron sputtering. Coplanar waveguides with 1 μm slot width are designed, with accurate knowledge frequency losses behavior, to determine ferroelectric thin-films properties up to 60 GHz. Permittivity, loss tangent, and tunability are extracted through measurements and home made finite element analysis. Tunability of 33% and 29%, with 30 V maximum applied voltage (electric field of 300 kV/cm), are measured at 5 GHz and 60 GHz, respectively, while the dielectric losses evolve from 0.5% to 5%. A brief highlight is proposed about tunable silicon integrated quarter wavelength transformer potentialities for impedance matching.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3454772