Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions

Heterojunctions made of hydrogenated amorphous silicon ( a -Si : H ) and crystalline silicon ( c -Si ) are examined by conducting probe atomic force microscopy. Conductive channels at both ( n ) a -Si : H / ( p ) c -Si and ( p ) a -Si : H / ( n ) c -Si interfaces are clearly revealed. These are attr...

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Published in:Applied physics letters 2010-12, Vol.97 (25), p.252110-252110-3
Main Authors: Maslova, O. A., Alvarez, J., Gushina, E. V., Favre, W., Gueunier-Farret, M. E., Gudovskikh, A. S., Ankudinov, A. V., Terukov, E. I., Kleider, J. P.
Format: Article
Language:English
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Summary:Heterojunctions made of hydrogenated amorphous silicon ( a -Si : H ) and crystalline silicon ( c -Si ) are examined by conducting probe atomic force microscopy. Conductive channels at both ( n ) a -Si : H / ( p ) c -Si and ( p ) a -Si : H / ( n ) c -Si interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the c -Si surface in agreement with previous planar conductance measurements. The presence of a hole gas in ( p ) a -Si : H / ( n ) c -Si structures implies a quite large valence band offset ( E V c -Si − E V a -Si : H > 0.25   eV ) .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3525166