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Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions
Heterojunctions made of hydrogenated amorphous silicon ( a -Si : H ) and crystalline silicon ( c -Si ) are examined by conducting probe atomic force microscopy. Conductive channels at both ( n ) a -Si : H / ( p ) c -Si and ( p ) a -Si : H / ( n ) c -Si interfaces are clearly revealed. These are attr...
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| Published in: | Applied physics letters 2010-12, Vol.97 (25), p.252110-252110-3 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c318t-1e046aef3c5ac289eb867a9dcf32a66fcb0c289ce7cdda6ee88addc211834c053 |
| container_end_page | 252110-3 |
| container_issue | 25 |
| container_start_page | 252110 |
| container_title | Applied physics letters |
| container_volume | 97 |
| creator | Maslova, O. A. Alvarez, J. Gushina, E. V. Favre, W. Gueunier-Farret, M. E. Gudovskikh, A. S. Ankudinov, A. V. Terukov, E. I. Kleider, J. P. |
| description | Heterojunctions made of hydrogenated amorphous silicon
(
a
-Si
:
H
)
and crystalline silicon
(
c
-Si
)
are examined by conducting probe atomic force microscopy. Conductive channels at both
(
n
)
a
-Si
:
H
/
(
p
)
c
-Si
and
(
p
)
a
-Si
:
H
/
(
n
)
c
-Si
interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the
c
-Si
surface in agreement with previous planar conductance measurements. The presence of a hole gas in
(
p
)
a
-Si
:
H
/
(
n
)
c
-Si
structures implies a quite large valence band offset
(
E
V
c
-Si
−
E
V
a
-Si
:
H
>
0.25
eV
)
. |
| doi_str_mv | 10.1063/1.3525166 |
| format | article |
| fullrecord | <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00557102v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_00557102v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c318t-1e046aef3c5ac289eb867a9dcf32a66fcb0c289ce7cdda6ee88addc211834c053</originalsourceid><addsrcrecordid>eNp1kctOwzAQRS0EEuWx4A-8ZRGw48ZJN0hVxUuq1A2srclkQlylcWW7lfJB_CcJ5bVhNTNXZ8bWvYxdSXEjhVa38kZlaSa1PmITKfI8UVIWx2wihFCJnmXylJ2FsB7GLFVqwt5XZSC_h2hdx8ueo-uqHUa7p2TrXUkcottY5LXzSHzovAvotj13NQ_Ru-6t7bnt9uQjVTzsfA0D10JPPgy7PDbEm77y7o06GBHYOL9t3C7wYFs7PHeLvg8R2tZ29K3xhiJ5t951OH4sXLCTGtpAl1_1nL0-3L8snpLl6vF5MV8mqGQRE0liqoFqhRlgWsyoLHQOswprlYLWNZZilJFyrCrQREUBVYXpYJGaosjUObs-3G2gNVtvN-B748Cap_nSjNpgW5ZLke7lLztaEjzVPwtSmDELI81XFgN7d2AD2vjp9f_wn0BM2ZvPQNQHl2iX8Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP_美国物理联合会现刊（与NSTL共建）</source><creator>Maslova, O. A. ; Alvarez, J. ; Gushina, E. V. ; Favre, W. ; Gueunier-Farret, M. E. ; Gudovskikh, A. S. ; Ankudinov, A. V. ; Terukov, E. I. ; Kleider, J. P.</creator><creatorcontrib>Maslova, O. A. ; Alvarez, J. ; Gushina, E. V. ; Favre, W. ; Gueunier-Farret, M. E. ; Gudovskikh, A. S. ; Ankudinov, A. V. ; Terukov, E. I. ; Kleider, J. P.</creatorcontrib><description>Heterojunctions made of hydrogenated amorphous silicon
(
a
-Si
:
H
)
and crystalline silicon
(
c
-Si
)
are examined by conducting probe atomic force microscopy. Conductive channels at both
(
n
)
a
-Si
:
H
/
(
p
)
c
-Si
and
(
p
)
a
-Si
:
H
/
(
n
)
c
-Si
interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the
c
-Si
surface in agreement with previous planar conductance measurements. The presence of a hole gas in
(
p
)
a
-Si
:
H
/
(
n
)
c
-Si
structures implies a quite large valence band offset
(
E
V
c
-Si
−
E
V
a
-Si
:
H
>
0.25
eV
)
.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3525166</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-12, Vol.97 (25), p.252110-252110-3</ispartof><rights>2010 American Institute of Physics</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c318t-1e046aef3c5ac289eb867a9dcf32a66fcb0c289ce7cdda6ee88addc211834c053</citedby><cites>FETCH-LOGICAL-c318t-1e046aef3c5ac289eb867a9dcf32a66fcb0c289ce7cdda6ee88addc211834c053</cites><orcidid>0000-0003-4388-6326 ; 0000-0003-1615-498X ; 0000-0003-3558-8302</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3525166$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,782,784,795,885,27924,27925,76383</link.rule.ids><backlink>$$Uhttps://centralesupelec.hal.science/hal-00557102$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Maslova, O. A.</creatorcontrib><creatorcontrib>Alvarez, J.</creatorcontrib><creatorcontrib>Gushina, E. V.</creatorcontrib><creatorcontrib>Favre, W.</creatorcontrib><creatorcontrib>Gueunier-Farret, M. E.</creatorcontrib><creatorcontrib>Gudovskikh, A. S.</creatorcontrib><creatorcontrib>Ankudinov, A. V.</creatorcontrib><creatorcontrib>Terukov, E. I.</creatorcontrib><creatorcontrib>Kleider, J. P.</creatorcontrib><title>Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions</title><title>Applied physics letters</title><description>Heterojunctions made of hydrogenated amorphous silicon
(
a
-Si
:
H
)
and crystalline silicon
(
c
-Si
)
are examined by conducting probe atomic force microscopy. Conductive channels at both
(
n
)
a
-Si
:
H
/
(
p
)
c
-Si
and
(
p
)
a
-Si
:
H
/
(
n
)
c
-Si
interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the
c
-Si
surface in agreement with previous planar conductance measurements. The presence of a hole gas in
(
p
)
a
-Si
:
H
/
(
n
)
c
-Si
structures implies a quite large valence band offset
(
E
V
c
-Si
−
E
V
a
-Si
:
H
>
0.25
eV
)
.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kctOwzAQRS0EEuWx4A-8ZRGw48ZJN0hVxUuq1A2srclkQlylcWW7lfJB_CcJ5bVhNTNXZ8bWvYxdSXEjhVa38kZlaSa1PmITKfI8UVIWx2wihFCJnmXylJ2FsB7GLFVqwt5XZSC_h2hdx8ueo-uqHUa7p2TrXUkcottY5LXzSHzovAvotj13NQ_Ru-6t7bnt9uQjVTzsfA0D10JPPgy7PDbEm77y7o06GBHYOL9t3C7wYFs7PHeLvg8R2tZ29K3xhiJ5t951OH4sXLCTGtpAl1_1nL0-3L8snpLl6vF5MV8mqGQRE0liqoFqhRlgWsyoLHQOswprlYLWNZZilJFyrCrQREUBVYXpYJGaosjUObs-3G2gNVtvN-B748Cap_nSjNpgW5ZLke7lLztaEjzVPwtSmDELI81XFgN7d2AD2vjp9f_wn0BM2ZvPQNQHl2iX8Q</recordid><startdate>20101220</startdate><enddate>20101220</enddate><creator>Maslova, O. A.</creator><creator>Alvarez, J.</creator><creator>Gushina, E. V.</creator><creator>Favre, W.</creator><creator>Gueunier-Farret, M. E.</creator><creator>Gudovskikh, A. S.</creator><creator>Ankudinov, A. V.</creator><creator>Terukov, E. I.</creator><creator>Kleider, J. P.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-4388-6326</orcidid><orcidid>https://orcid.org/0000-0003-1615-498X</orcidid><orcidid>https://orcid.org/0000-0003-3558-8302</orcidid></search><sort><creationdate>20101220</creationdate><title>Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions</title><author>Maslova, O. A. ; Alvarez, J. ; Gushina, E. V. ; Favre, W. ; Gueunier-Farret, M. E. ; Gudovskikh, A. S. ; Ankudinov, A. V. ; Terukov, E. I. ; Kleider, J. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c318t-1e046aef3c5ac289eb867a9dcf32a66fcb0c289ce7cdda6ee88addc211834c053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Maslova, O. A.</creatorcontrib><creatorcontrib>Alvarez, J.</creatorcontrib><creatorcontrib>Gushina, E. V.</creatorcontrib><creatorcontrib>Favre, W.</creatorcontrib><creatorcontrib>Gueunier-Farret, M. E.</creatorcontrib><creatorcontrib>Gudovskikh, A. S.</creatorcontrib><creatorcontrib>Ankudinov, A. V.</creatorcontrib><creatorcontrib>Terukov, E. I.</creatorcontrib><creatorcontrib>Kleider, J. P.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Maslova, O. A.</au><au>Alvarez, J.</au><au>Gushina, E. V.</au><au>Favre, W.</au><au>Gueunier-Farret, M. E.</au><au>Gudovskikh, A. S.</au><au>Ankudinov, A. V.</au><au>Terukov, E. I.</au><au>Kleider, J. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions</atitle><jtitle>Applied physics letters</jtitle><date>2010-12-20</date><risdate>2010</risdate><volume>97</volume><issue>25</issue><spage>252110</spage><epage>252110-3</epage><pages>252110-252110-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Heterojunctions made of hydrogenated amorphous silicon
(
a
-Si
:
H
)
and crystalline silicon
(
c
-Si
)
are examined by conducting probe atomic force microscopy. Conductive channels at both
(
n
)
a
-Si
:
H
/
(
p
)
c
-Si
and
(
p
)
a
-Si
:
H
/
(
n
)
c
-Si
interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the
c
-Si
surface in agreement with previous planar conductance measurements. The presence of a hole gas in
(
p
)
a
-Si
:
H
/
(
n
)
c
-Si
structures implies a quite large valence band offset
(
E
V
c
-Si
−
E
V
a
-Si
:
H
>
0.25
eV
)
.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3525166</doi><orcidid>https://orcid.org/0000-0003-4388-6326</orcidid><orcidid>https://orcid.org/0000-0003-1615-498X</orcidid><orcidid>https://orcid.org/0000-0003-3558-8302</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-12, Vol.97 (25), p.252110-252110-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_00557102v1 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建） |
| title | Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions |
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