Electron mobility increase in submicronic transistors integrated on ultra thin membranes subjected to high mechanical stress

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Bibliographic Details
Published in:Applied physics letters 2010-03, Vol.96, p.092107:1-3
Main Authors: Bercu, B., Montès, L., Rochette, F., Mouis, M., Xin, X., Morfouli, P.
Format: Article
Language:English
Subjects:
Condensed Matter
Engineering Sciences
Micro and nanotechnologies
Microelectronics
Other
Physics
Online Access:Get full text
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ISSN:0003-6951
1077-3118