On the accuracy of current TCAD hot carrier injection models in nanoscale devices

• Published in: Solid-state electronics 2010-12, Vol.54 (12), p.1669-1674
• Main Authors: Zaka, Alban, Rafhay, Quentin, Iellina, Matteo, Palestri, Pierpaolo, Clerc, Raphaël, Rideau, Denis, Garetto, Davide, Dornel, Erwan, Singer, Julien, Pananakakis, Georges, Tavernier, Clément, Jaouen, Hervé
• Format: Article
• Language: English
• Subjects: Applied sciences; Computer simulation; Condensed Matter; Current density; Design. Technologies. Operation analysis. Testing; Devices; Electronics; Engineering Sciences; Exact sciences and technology; Fiegna model; Gate current; Gates; Hot carrier injection; Hot electrons; Injection efficiency; Injection models; Integrated circuits; Integrated circuits by function (including memories and processors); Mathematical models; Micro and nanotechnologies; Microelectronics; Molecular electronics, nanoelectronics; Monte carlo; Monte Carlo methods; Nanostructure; NOR; NVM; Other; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Spherical harmonics expansion; TCAD
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2010.06.014

In this work, the hot electron injection models presently available for technology support have been investigated within the context of the development of advanced embedded non-volatile memories. The distribution functions obtained by these models (namely the Fiegna Model – FM [1], the Lucky Electron Model – LEM [2] and the recently implemented Spherical Harmonics Expansion of the Boltzman’s Transport Equation – SHE [3]), have been systematically compared to rigorous Monte Carlo (MC) results [4], both in homogeneous and device conditions. Gate-to-drain current ratio and gate current density simulation has also been benchmarked in device simulations. Results indicate that local models such as FM, can partially capture the channel hot electron injection, at the price of model parameter adjustments. Moreover, at least in the device and field condition considered in this work, an overall better agreement with MC simulations has been obtained using the 1st order SHE, even without any particular fitting procedure. Extending the results presented in [3] by exploring shorter gate lengths and addressing the floating gate voltage dependence of the gate current, this work shows that the SHE method could contribute to bridge the gap between the rigorous but time consuming MC method and less rigorous but suitable TCAD local models.