Characterization of ion/electron beam induced deposition of electrical contacts at the sub-μm scale

• Published in: Microelectronic engineering 2011-07, Vol.88 (7), p.1569-1572
• Main Authors: Brunel, D., Troadec, D., Hourlier, D., Deresmes, D., Zdrojek, M., Mélin, T.
• Format: Article
• Language: English
• Subjects: Applied sciences; Carbon nanotube; Cross-disciplinary physics: materials science; rheology; Electron beam induced deposition; Electronics; Engineering Sciences; Exact sciences and technology; FIB; Four probe measurements; Interfaces; Ion and electron beam-assisted deposition; ion plating; Ion beam induced deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Micro and nanotechnologies; Microelectronics; Molecular, atomic, ion, and chemical beam epitaxy; Nanoscale materials and structures: fabrication and characterization; Nanotubes; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transport measurements
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2011.03.011

We investigate the fabrication of electrical contacts using ion- and electron-beam induced deposition of platinum at the sub-μm scale. Halos associated with the metal surface decoration are characterized electrically in the 0.05–2 μm range using transport measurements, conducting atomic force microscopy and Kelvin probe microscopy. In contrast with IBID, EBID electrodes are shown to exhibit a low leakage resistance (above 1 MΩ) at the sub-100 nm scale, and are thus suitable to achieve resist-free electrical contacts for transport measurements on nanostructures. Four-point transport data using μm-spaced EBID contacts are provided for a multiwalled carbon nanotube.