Regrowth of oxide-embedded amorphous silicon studied with molecular dynamics

Classical molecular dynamics simulations are applied to the study of amorphous silicon regrowth in a nanodevice. A simplified atomistic amorphous nanostructure presenting the main features of a FinFET device is designed. A thermal treatment is used to simulate the annealing of the atomic model. The...

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Bibliographic Details
Published in:Journal of applied physics 2011-06, Vol.109 (12), p.123509-123509-5
Main Authors: Lampin, E., Krzeminski, C.
Format: Article
Language:English
Subjects:
Engineering Sciences
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Summary:Classical molecular dynamics simulations are applied to the study of amorphous silicon regrowth in a nanodevice. A simplified atomistic amorphous nanostructure presenting the main features of a FinFET device is designed. A thermal treatment is used to simulate the annealing of the atomic model. The structure after annealing is very close to what observed experimentally, with perfect crystal near the silicon seed, an intermediate crystalline layer presenting [111] twins, and an upper terminal region of polysilicon. The comparison with 2D system suggests surface proximity effects that impact the probability to form grains and twins. As a consequence, it seems like the solid phase epitaxy was arrested in the nanostructure.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3596815