SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

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Bibliographic Details
Published in:Microelectronic engineering 2011-07, Vol.88 (7), p.1376-1379
Main Authors: DELCROIX, P, BLONKOWSKI, S, GARROS, X, GRAMPEIX, H, GASSILLOUD, R, KOGELSCHATZ, M, RAFIK, M, GOURHANT, O, JEANJEAN, D, BENEYTON, R, ROY, D, FEDERSPIEL, X, MARTIN, F
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Dielectric breakdown and space-charge effects
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2011.03.058