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container_end_page 1379
container_issue 7
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container_title Microelectronic engineering
container_volume 88
creator DELCROIX, P
BLONKOWSKI, S
GARROS, X
GRAMPEIX, H
GASSILLOUD, R
KOGELSCHATZ, M
RAFIK, M
GOURHANT, O
JEANJEAN, D
BENEYTON, R
ROY, D
FEDERSPIEL, X
MARTIN, F
description
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ispartof Microelectronic engineering, 2011-07, Vol.88 (7), p.1376-1379
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source ScienceDirect Freedom Collection
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Dielectric breakdown and space-charge effects
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
title SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum
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