Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout

In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under different HCI conditions and the nth power law MOSFET model has been extracted...

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Bibliographic Details
Published in:Microelectronics and reliability 2011-09, Vol.51 (9-11), p.1564-1567
Main Authors: Berbel, N., Fernández-García, R., Gil, I., Li, B., Boyer, A., BenDhia, S.
Format: Article
Language:English
Subjects:
Applied sciences
Carrier injection
Carriers
Circuits
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Engineering Sciences
Exact sciences and technology
Microelectronics
MOSFETs
Other multijunction devices. Power transistors. Thyristors
Power electronics, power supplies
Power law
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under different HCI conditions and the nth power law MOSFET model has been extracted for each sample. The results show that the model can reproduce the MOSFET behavior under HCI wearout mechanism. Therefore, the impact of HCI on circuits can be analyzed by using the nth power law MOSFET model.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2011.06.041