Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach

Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geo...

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Bibliographic Details
Published in:Applied physics letters 2012-02, Vol.100 (6), p.062403-062403-3
Main Authors: Nestoklon, M. O., Krebs, O., Jaffrès, H., Ruttala, S., George, J.-M., Jancu, J.-M., Voisin, P.
Format: Article
Language:English
Subjects:
Aluminum gallium arsenides
Anisotropy
Binding
Dispersions
Engineering Sciences
Gallium arsenide
Manganese
Optics
Photonic
Symmetry
Tunnels (transportation)
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Summary:Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with the p-d exchange interaction, cubic anisotropy of heavy-hole dispersion and the low C 2 v symmetry of the chemical bonds.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3683525