Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by gas immersion laser doping. The doping concentration c(B) has been varied up to similar to 10 at. % by increasing the number of laser shots to 500. No superconductivity co...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2010-01, Vol.81 (2), Article 020501
Main Authors: Marcenat, C., Kačmarčík, J., Piquerel, R., Achatz, P., Prudon, G., Dubois, C., Gautier, B., Dupuy, J. C., Bustarret, E., Ortega, L., Klein, T., Boulmer, J., Kociniewski, T., Débarre, D.
Format: Article
Language:English
Subjects:
Condensed Matter
Physics
Superconductivity
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Summary:We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by gas immersion laser doping. The doping concentration c(B) has been varied up to similar to 10 at. % by increasing the number of laser shots to 500. No superconductivity could be observed down to 40 mK for doping level below similar to 2 at. %. The critical temperature T(c) then increased steeply to reach similar to 0.6 K for c(B) similar to 8 at. %. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field mu(o)H(c2) (0) was on the order of 1000 G, much smaller than the value previously reported by Bustarret et al. [E. Bustarret et al., Nature (London) 444, 465 (2006)].
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.81.020501