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Bismuth-Catalyzed and Doped Silicon Nanowires for One-Pump-Down Fabrication of Radial Junction Solar Cells
Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor–liquid–solid (VLS) mode, to fabricate amorphous Si radial n–i–p junction solar cells in a one-pump-down...
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Published in: | Nano letters 2012-08, Vol.12 (8), p.4153-4158 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor–liquid–solid (VLS) mode, to fabricate amorphous Si radial n–i–p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V oc = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J sc = 11.23 mA/cm2. More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells. |
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ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/nl3017187 |